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STIMULATED EMISSION ON SILICON AFTER OXIDATION BY IRRADIATION AND ANNEALING

RONG-TAO ZHANG

Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550026, China

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HAI-XU WANG

Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550026, China

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FENG JIN

Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550026, China

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LI XU

Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550026, China

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KE-YUE WU

Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550026, China

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SHUI-JIE QIN

Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550026, China

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SHI-RONG LIU

Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China

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, and

CAO-JIAN QIN

Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China

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https://doi.org/10.1142/S0217984908017503Cited by:0 (Source: Crossref)

Abstract

Stimulated emission has been observed from oxide structure of silicon when optically excited by 514 nm laser. The twin peaks in the region from 690 nm to 700 nm are dominated by stimulated emission which can be demonstrated by its threshold behavior and transition in linear evolution. The oxide structure was fabricated by laser irradiation and annealing treatment on silicon. A model for explaining the stimulated emission has been proposed in which the trap states of the interface between oxide of silicon and porous nanocrystal play an important role.

Keywords:

PACS: 68.35.-p, 61.43.Bn

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