THE STUDIES OF THERMAL ANNEALING ON Pt/AlGaN GROWN ON Si(111) BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (PA-MBE)
Abstract
The application of thermal annealing at various annealing temperatures (473–1073 K) has been shown to significantly modify surface morphology of platinum (Pt) metal contacts on AlGaN/GaN/AlN heterostructure grown on silicon by plasma-assisted molecular beam epitaxy (PA-MBE). Structural analysis of the AlGaN/GaN samples used for the Pt Schottky contacts fabrication were performed by using high resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The Pt metal contacts were then deposited on the samples followed by current–voltage (I–V) characterization. Thermally-treated samples showed significant decrease in current compared with untreated samples. From the I–V measurements, the Schottky barrier height (SBH) and ideality factor (n) were calculated. We found that the lowest value of SBH obtained was 0.526 eV at 873 K annealing temperature. Unfortunately, there are no values for the SBH and ideality factor at 1073 K annealing temperature. The SEM analysis has shown some island formation at high annealing temperature due to the difference of surface energies between thin metal films and AlGaN that causes dewetting. We suggest that the reason for the barrier height reduction is due to the metal island formation on the samples.
