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PHOTOINDUCED LASER EFFECTS IN INDIUM NITRIDE FILM

Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, China

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C. M. GU

Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, China

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W. Z. SHEN

Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, China

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https://doi.org/10.1142/S021798491102550XCited by:2 (Source: Crossref)

Abstract

The optical nonlinear absorption properties in sputtering Indium nitride (InN) film were investigated under the excitations of nanosecond, picosecond and femtosecond pulsed lasers by open-aperture transmission Z-scan technique (TZ-scan). Under the condition of hν > E_g, the saturable absorption (SA) phenomena induced by one-photon transition were observed in both nanosecond and picosencond pulsed TZ-scan measurements. When 2hν > E_g > hν, the film presented SA due to the two-photon transition under the excitation of picosecond laser. However, at femtosecond 800 nm, the film showed the two-photon absorption (TPA) instead of SA, and the TPA coefficient tended to a saturable value as the excitation intensity increased. The results indicate that the InN film is a kind of good saturable absorber.

Keywords:

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