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FORTHCOMING GALLIUM NITRIDE BASED POWER DEVICES IN PROMPTING THE DEVELOPMENT OF HIGH POWER APPLICATIONS

School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Pulau Pinang, Malaysia

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K. Y. CHEONG

School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Pulau Pinang, Malaysia

Corresponding author.

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, and

Z. HASSAN

School of Physics, Universiti Sains Malaysia, 11800 Minden, Pulau Pinang, Malaysia

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https://doi.org/10.1142/S021798491102564XCited by:6 (Source: Crossref)

Abstract

Recent advances in silicon technology have pushed the silicon properties to its theoretical limits. Therefore, wide band gap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN) have been considered as a replacement for silicon. The discovery of these wide band gap semiconductors have given the new generation power devices a magnificent prospect of surviving under high temperature and hostile environments. The primary focuses of this review are the properties of GaN, the alternative substrates that can be used to deposit GaN and the substitution of SiO₂ gate dielectric with high dielectric constant (k) film. The future perspectives of AlGaN/GaN heterostructures are also discussed, providing that these structures are able to further enhance the performance of high power devices.

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