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THE EFFECT OF ETCHING TIME ON RECTIFYING CHARACTERISTIC IN SnO₂/p-Si AND SnO₂/p-PoSi HETEROJUNCTION SCHOTTKY DIODES

ALIREZA BIARAM

Department of Physics, Shahrood University of Technology, Shahrood, Iran

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and

HOSEIN ESHGHI

Department of Physics, Shahrood University of Technology, Shahrood, Iran

Corresponding author.

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https://doi.org/10.1142/S0217984913500516Cited by:2 (Source: Crossref)

Abstract

We have fabricated SnO₂/p-Si and SnO₂/p-PoSi heterojunction diodes by spray pyrolysis method. To prepare porous Si substrates, the etching time was varied from 10 to 20 and 30 mins. In these samples, the SEM micrographs showed a distributed pore areas surrounded by columnar walls with various height. The data analysis of the rectified I–V characteristic, using thermionic emission Schottky diode theory, showed that although the barrier height is about 0.5–0.6 eV in all samples other two important diode parameters, i.e. the ideality factor n and the series resistance r_s, are strongly etching time-dependant and are increased with increasing the etching time.

Keywords:

PACS: 85.30.Hi, 85.30.Kk, 81.05.Rm, 73.20.-r

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