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Negative differential resistance induced by SiN_x co-dopant in armchair graphene nanoribbon

Cai-ping Cheng

College of Physics and Microelectronics Science, Hunan University, Changsha 410082, China

Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha 410082, China

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Hui-fang Hu

College of Physics and Microelectronics Science, Hunan University, Changsha 410082, China

Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha 410082, China

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Zhao-jin Zhang

College of Physics and Microelectronics Science, Hunan University, Changsha 410082, China

Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha 410082, China

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Quanhui Liu

College of Physics and Microelectronics Science, Hunan University, Changsha 410082, China

Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha 410082, China

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Ying Chen

College of Physics and Microelectronics Science, Hunan University, Changsha 410082, China

Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha 410082, China

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, and

Ping Peng

College of Materials Science and Engineering, Hunan University, Changsha 410082, China

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https://doi.org/10.1142/S0217984914502297Cited by:3 (Source: Crossref)

Abstract

By adopting density functional theory in combination with nonequilibrium Green's functions, we investigated the electronic structure and transport properties of silicon/nitrogen (Si/N) co-doping armchair graphene nanoribbons (AGNRs) with SiN_x co-dopant incorporated in neighboring carbon atoms. The results demonstrate that the electronic structure can be modulated by introducing SiN_x co-dopants in AGNRs. The striking negative differential resistance behaviors in the range of low bias can be observed in Si/N co-doped AGNR devices. These remarkable properties suggest the potential application of Si/N co-doping AGNRs in molectronics.

Keywords:

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