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Study of surface-enhanced Raman scattering of InAs particles of subwavelength apertures at terahertz frequencies

School of Electronics Information Engineering, Tianjin Key Lab of Film Electronic and Communication Devices, Engineering Research Center of Communication Devices and Technology, Ministry of Education, Tianjin University of Technology, Tianjin 300384, China

E-mail Address: 763847182@qq.com

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Guangjun Ren

E-mail Address: rgj1@163.com

Corresponding author.

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Rongjian Du

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Yongming Zhang

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Tianbo Tan

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Yaqi Wang

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, and

Jianquan Yao

College of Precision Instrument and Opto-electronics Engineering, Institute of Laser and Opto-electronics, Key Laboratory of Optoelectric Information Science and Technology, Ministry of Education, Tianjin University, Tianjin 300072, China

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https://doi.org/10.1142/S0217984915501973Cited by:4 (Source: Crossref)

Abstract

We present a theoretical mechanism for electric field enhancement with SERS of InAs particles of subwavelength apertures under THz excitation. The distribution of electric field confirms that there is a strong enhancement in the InAs particles at THz frequencies. The InAs with a Drude-like behavior in THz range, which is similar to metals at optical frequencies, leads to different SERS when the parameters of these two particles change. The SERS enhancement factor can reach $1 0^{11}$ under the certain conditions.

Keywords:

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