World Scientific
Skip main navigation

Cookies Notification

We use cookies on this site to enhance your user experience. By continuing to browse the site, you consent to the use of our cookies. Learn More
×

System Upgrade on Tue, May 28th, 2024 at 2am (EDT)

Existing users will be able to log into the site and access content. However, E-commerce and registration of new users may not be available for up to 12 hours.
For online purchase, please visit us again. Contact us at customercare@wspc.com for any enquiries.

Strain-induced asymmetric modulation of band gap in narrow armchair-edge graphene nanoribbon

    https://doi.org/10.1142/S0217984915502243Cited by:2 (Source: Crossref)

    We investigate the band structure of narrow armchair-edge graphene nanoribbons (AGNRs) under tensile strain by means of an extension of the Extended Hückel method. The strain-induced band gap modulation presents asymmetric behavior. The asymmetric modulation of band gap is derived from the different changes of conduction and valence bands near Fermi level under tensile strain. Further analysis suggests that the asymmetric variation of band structure near Fermi level only appear in narrow armchair-edge graphene nanoribbons.

    PACS: 73.40.-c, 72.10.-d, 71.15.Mb, 73.63.-b, 85.65.+h, 81.08.Uw, 73.50.Fq