Materials Electronic Device ApplicationsNo Access

40 Gbaud binary phase shift keying signal modulation using a substrate removed silicon modulator

Wuhan National Laboratory for Optoelectronics, & School of Optical and Electronic Information, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, Hubei 430074, China

Wuhan Research Institute of Posts and Telecommunications, State Key Laboratory of Optical Communication Technologies and Networks, 88 Youkeyuan Road, Hongshan District, Wuhan, Hubei 430074, China

E-mail Address: mfli@wri.com.cn

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Xi Xiao

Wuhan Research Institute of Posts and Telecommunications, State Key Laboratory of Optical Communication Technologies and Networks, 88 Youkeyuan Road, Hongshan District, Wuhan, Hubei 430074, China

E-mail Address: xxiao@wri.com.cn

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Qi Yang

Wuhan Research Institute of Posts and Telecommunications, State Key Laboratory of Optical Communication Technologies and Networks, 88 Youkeyuan Road, Hongshan District, Wuhan, Hubei 430074, China

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, and

Shaohua Yu

Wuhan Research Institute of Posts and Telecommunications, State Key Laboratory of Optical Communication Technologies and Networks, 88 Youkeyuan Road, Hongshan District, Wuhan, Hubei 430074, China

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https://doi.org/10.1142/S0217984917400097Cited by:0 (Source: Crossref)

Abstract

Substrate removing technique is proposed in silicon Mach–Zehnder modulator (MZM) to improve the electro-optic bandwidth. Based on this technique, a silicon MZM with 3 dB electro-optical bandwidth of 55 GHz is achieved at 5 V reverse bias for the first time. The V $π \cdot$ $π \cdot$ L of the modulator is 1.3 V $\cdot$ $\cdot$ cm with an on-chip insertion loss of 5.4 dB. The substrate removing technique reduces the electrode transmission loss, achieves the electro-optical group index matching and realizes 50 $Ω$ $Ω$ impedance matching, simultaneously. In this work, we experimentally demonstrate BPSK modulation based on this modulator at the baud rate up to 56 Gb/s.

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