Study on the properties of zinc oxide films with different CF4 flow rates
Abstract
In this research, we will show that as the flow rates of CF4(CF4/(Ar+CF4))(CF4/(Ar+CF4)) are different, the optical, crystal, and electrical properties of FZO films have large variations. At first, ZnO target is prepared by ourselves, the radio frequency (RF) magnetron sputtering is used as a method for the deposition of FZO films, and different flow rates of CF4 gas is introduced into the chamber during the deposition process. Next, we use the EagleXG glass as the substrates to deposit FZO films and we control the deposition time to make the thicknesses of deposited FZO films at about 330 nm. The flow rate of CF4 gas is controlled using CF4/(Ar+CF4)CF4/(Ar+CF4) mixing atmosphere and it is changed from 0% to 0.5%. After FZO films are deposited, their crystalline phase is identified using XRD, surface morphology and thickness that are observed using SEM, optical property (which is further used to measure the optical energy gap) are measured using an n&k analyzer, and electrical properties are measured using Hall equipment. A comparative study on the residual fluorine is also analyzed using FESEM equipped with energy dispersive X-ray spectroscopy (EDS) analysis.
