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ArticlesNo Access

MICROCRACKS IN ~ 100 MeV Si⁷⁺-ION-IRRADIATED p-SILICON SURFACES

Department of Physics, Banaras Hindu University, Varanasi – 221 005, India

Present address: Institute of Physics, Sachivalya Marg, Bhubaneshwar – 751005, India.

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P. C. SRIVASTAVA

Department of Physics, Banaras Hindu University, Varanasi – 221 005, India

Corresponding author. Fax: 91-542-2368174. Tel.: 91-542-2500792(R).

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Inter University Consortium for Department of Atomic Energy Facilities, Indore – 452 017, India

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https://doi.org/10.1142/S0218625X04006177Cited by:0 (Source: Crossref)

Abstract

The p-silicon surfaces have been irradiated with ~ 100 MeV Si⁷⁺ions to a fluence of 2.2×10¹³ ions cm^-2, and surface morphology has been studied with atomic force microscopy (AFM). Interesting features of cracks of ~ 47 nm in depth and ~ 103 nm in width on the irradiated surfaces have been observed. The observed features seemed to have been caused by the irradiation-induced stress in the irradiated regions of the target surface.

Keywords:

PACS: 7.79Lh, 61.82Fx, 68.35B, 79.20Rf

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Vol. 11, No. 03

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History

Received 5 March 2004

Keywords