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SURFACE MODIFICATION OF PRINTED CARBON NANOTUBES AND ITS APPLICATION OF FIELD EMISSION

Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China

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JIHUA ZHANG

Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China

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XI WANG

Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China

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XIANGHUAI LIU

Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China

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SHICHANG ZOU

Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China

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QIONG LI

Department of Electronics Science and Technology, East China Normal University, Shanghai 200062, China

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JINGFANG XU

Department of Electronics Science and Technology, East China Normal University, Shanghai 200062, China

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https://doi.org/10.1142/S0218625X05007591Cited by:2 (Source: Crossref)

Abstract

A surface-modified carbon nanotubes (CNTs), which shows an excellent electron field emission property was obtained in the present work. Conventional screen-printing technology was applied to prepare the CNT films. After hydrogen plasma surface treating process, the morphology of nanotubes surface were totally changed. Those modified CNTs exhibited low turn-on electron field of 0.98 V/μm, current density of 1 mA/cm² at a field of 6.53 V/μm and a very high emission site density of about 10⁶/cm², which is three orders of magnitude higher than that of untreated CNT films. Diode-type prototype devices were obtained which proved the modified CNTs is suitable for field emission displays.

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