World Scientific
Skip main navigation

Cookies Notification

We use cookies on this site to enhance your user experience. By continuing to browse the site, you consent to the use of our cookies. Learn More
×

System Upgrade on Tue, May 28th, 2024 at 2am (EDT)

Existing users will be able to log into the site and access content. However, E-commerce and registration of new users may not be available for up to 12 hours.
For online purchase, please visit us again. Contact us at customercare@wspc.com for any enquiries.

NANO-PARTICLES AND FILMS OF CARBON NITRIDE PREPARED BY USING THE SIMPLE PLASMA SPUTTERING DEPOSITION TECHNIQUES

    https://doi.org/10.1142/S0218625X06008943Cited by:2 (Source: Crossref)

    Nanoscale particles and films of carbon nitride (CN) were synthesized on Si(100) substrates at room temperature by using simple plasma sputtering deposition techniques based on DC Glow Discharge with Hollow Cathode electrodes. The bonding structures of the films were investigated by X-ray photoelectron spectroscopy and Raman spectroscopy. G and D bands in Raman spectra of the samples were identified. Following an increase of the precursor nitrogen pressure, the intensity of the D band in Raman spectra of the sample became strong. Similar phenomenon was also observed with an increase of the bias voltage. Scanning electron microscope images of the samples indicated that smooth and uniform CNx films were obtained at low bias voltages. Whereas, setting a pulsed bias voltage up to 5 kV, several groups of nanoparticles were observed. Each group of nanoparticles showed "sunflower" type of distribution.