Special Issue: Advances in Functional Materials; Guest Editors: Xiaoping Li, Li Lu, Jiangping Tu, Xinbin Zhao and Tiejun ZhuNo Access

DIELECTRIC AND FERROELECTRIC BEHAVIORS OF NOVEL PbTiO₃/NiFe₂O₄ THIN FILMS PREPARED BY SOL–GEL METHOD

YANLING DONG

The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China

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XIN WANG

The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China

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XIAOYAN CHAI

The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China

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WENJIAN WENG

The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China

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GAORONG HAN

The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China

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, and

PIYI DU

The State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou, 310027, P. R. China

Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China

Corresponding author.

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https://doi.org/10.1142/S0218625X08010865Cited by:7 (Source: Crossref)

Abstract

Ferroelectric/ferromagnetic (ME) biphase composite thin films with the type of (1–x)PbTiO₃(PT)–xNiFe₂O₄ (NFO) (x = 1–9) were successfully formed in situ by sol–gel process. The dielectric and ferroelectric behaviors of the composite thin films were investigated. The asymmetrical hysteresis loops of the composite arise from the leak current due to low resistivity of NFO. The stronger stress in the thin films due to the strong conjunction between PT and the substrate contributes to the increase (decrease) of the coercive force (the remanent polarization) with increasing the content of PT. The ME composites exhibit slight percolation effect. The high dielectric constant near the percolation threshold is attributed to the "micro-capacitors" in the composite thin films.

Keywords:

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