Special Issue: Advances in Functional Materials; Guest Editors: Xiaoping Li, Li Lu, Jiangping Tu, Xinbin Zhao and Tiejun ZhuNo Access

ENHANCED DIELECTRIC CHARACTERISTICS OF MANGANESE-DOPED BZT THIN FILMS

J. ZHU

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China

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W. J. JIE

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China

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X. H. WEI

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China

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W. F. QIN

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China

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Y. ZHANG

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China

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Y. R. LI

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China

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https://doi.org/10.1142/S0218625X08010907Cited by:3 (Source: Crossref)

Abstract

Ba(Zr_0.2Ti_0.8)O₃ (BZT) and 2 mol% Mn additional doped BZT (Mn-BZT) thin films were deposited by pulsed laser deposition technique under the same growth conditions on LaAlO₃ substrates with the bottom electrodes of LaNiO₃. The microstructure of the films was characterized by X-ray diffraction (XRD) in the mode of θ–2θ scan and Φ-scan. The results indicated that BZT film was (001)-oriented_with an in-plane relationship of BZT[100]//LNO[100]//LAO[100]. The Mn-BZT film exhibited higher dielectric constant of 225 at zero electric field, larger dielectric tunability of 59.4%, and lower dielectric loss of 1.8% under an applied electric field of 720 kV/cm. The figure of merit for BZT thin film increased from 19.8 to 33 by Mn doping. The enhanced dielectric behavior by Mn doping could be mainly attributed to the decrease of oxygen vacancies and the reorientation of the dipolar defect complex of .