Material ResearchNo Access
THE EFFECTS OF ANNEALING OF A p-TYPE PHOTOLUMINESCENT POROUS SILICON IN VACUUM
https://doi.org/10.1142/S0218625X02002166Cited by:0 (Source: Crossref)
Abstract
The changes of the structure and chemical states of photoluminescent p-type porous silicon (PS) caused by annealing in vacuum were investigated with atomic force microscopy and X-ray photoemission spectroscopy. The relative intensities of the silicon dioxide and suboxide peaks increased with the annealing temperature. The average size of the fine crystallites of the as-prepared samples was 5–10 nm and became 50–100 nm after being annealed at 550°C. The cause of photoluminescence quenching upon annealing is discussed.
