SPECIAL ISSUE ON THE INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY; EDITED BY M. K. SANYAL, A. K. RAYCHAUDHURI and D. CHAKRAVORTYNo Access
TRANSPORT AND NOISE FEATURES IN AlGaN/GaN FIELD EFFECT TRANSISTOR WITH NANOMETER-SCALING GATE LENGTH
https://doi.org/10.1142/S0219581X05003978Cited by:0 (Source: Crossref)
Abstract
The study of low frequency noise in nanoscale gate HEMT structures (LSD/LG >10) has been carried out. Deviation from 1/f dependence has been observed in extended range of frequency and one becomes more pronounced with increase of gate voltage. It is shown that main contribution to the noise stems from the region under the gate and adjacent parts of source-to-gate and gate-to-drain regions. The features observed in the carrier transport and noise spectra are explained within a model based on dynamic redistribution of the electric field along the conducting channel.
