SPECIAL ISSUE ON THE 13TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, PART II; EDITED BY R. SURISNo Access
MBE GROWN ZnSSe/ZnMgSSe MQW STRUCTURE FOR BLUE VCSEL
https://doi.org/10.1142/S0219581X07004493Cited by:2 (Source: Crossref)
Abstract
ZnSSe/ZnMgSSe MQW structures were grown by molecular beam epitaxy on GaAs substrates. The band gap of ZnMgSSe barriers was approximately 3 eV at room temperature. Cathodoluminescence, X-ray diffraction, optical, scanning electron beam, and atomic force microscopy were all used for structure characterization. Decay of the ZnMgSSe solid solution in at least two phases was observed. Improvement in the quality of the crystal lattice and surface morphology was achieved by mismatching the ZnMgSSe from the GaAs substrate by increasing the lattice period by 0.24%.
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