Special Issue on Nanoscience and Technology (ICONSAT 2010); Edited by D. Bahadur, Satish Vitta and A. K. SoodNo Access

ROLE OF DEFECTS IN SHAPING THE MAGNETIC PROPERTIES OF Gd-DOPED GaN

J. K. MISHRA

Physics Department, Indian Institute of Technology Bombay, Powai Mumbai–400076, India

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S. DHAR

Physics Department, Indian Institute of Technology Bombay, Powai Mumbai–400076, India

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M. A. KHADERABAD

Electrical Engineering Department, Indian Institute of Technology Bombay, Powai Mumbai–400076, India

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https://doi.org/10.1142/S0219581X11009386Cited by:1 (Source: Crossref)

Abstract

The effect of annealing on the structural and the magnetic properties of GaN implanted with Gd is investigated. The wavelength dependence of the photoconductivity of Gd:GaN layers doped in situ is also studied. These results show that Gd incorporation produces defects not only in implanted samples, but also in Gd:GaN layers doped in situ. A clear correlation between the saturation magnetization and the defect density is observed in implanted samples. A model has been proposed to explain the effects of colossal magnetic moment per Gd ion and associated ferromagnetism observed in this system in terms of the formation of giant defect cluster around each Gd ion.

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