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SIMPLE AND CATALYST-FREE SYNTHESIS OF SILICON OXIDE NANOWIRES AND NANOCOILS
https://doi.org/10.1142/S1793292007000404Cited by:13 (Source: Crossref)
Abstract
In this paper, a simple method for synthesizing SiOx nanowires and nanocoils is presented. Si substrates with an oxide layer were placed in a tube furnace exposed to temperatures ranging from 900°C to 1200°C for a few hours under a mixture of flowing Ar and H2 gas maintained at ambient pressure. Nanowires were grown from the surface when the furnace temperature was above 1000°C and a high yield could be achieved at 1100°C. SiOx nanocoils have also been observed and the sample treated at 1000°C had the highest concentration of them. TEM images show that the nanowires and the nanocoils have an amorphous structure and analysis of EDX spectra (obtained in the TEM) shows that x varies from 1.2 to 2.0. The mechanism of growth is discussed.
