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Morphological Dependence of Field Emission Properties of Silicon Nanowire Arrays

Centre for NanoScience & Technology, Department of Mechanical Engineering, Mepco Schlenk Engineering College, Sivakasi 626 005, Tamilnadu, India

E-mail Address: sumantakumarsahoo@live.com

Present address: Electrometallurgy and Corrosion Laboratory, Department of Metallurgical and Materials Engineering, National Institute of Technology, Rourkela 769 008, Odisha, India.

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and

Arumugam Marikani

Department of Physics, Mepco Schlenk Engineering College, Sivakasi 626 005, Tamilnadu, India

E-mail Address: amari@mepcoeng.ac.in

Corresponding author.

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https://doi.org/10.1142/S179329201650017XCited by:9 (Source: Crossref)

Abstract

The electron field emission (EFE) properties of vertically aligned arrays of silicon nanowires (SiNWs) grown from silicon substrate at different gold sputtering periods of 0s, 8s, 15s and 25s at a rate of 10nm/min by electroless metal deposition process were investigated. It has been observed that the transformation of silicon tips from irregular to highly dense and uniform cylindrical morphological nanostructures with an increase in Au sputtering periods. A significant enhancement in EFE properties of as-prepared arrays of SiNWs with the increase in Au sputtering periods is observed. The threshold fields for attaining current density of 0.1mA ${cm}^{- 2}$ ${cm}^{- 2}$ were decreased gradually as 32.38 $V μ m^{- 1}$ $V μ m^{- 1}$ , 29.37 $V μ m^{- 1}$ $V μ m^{- 1}$ and 23.19 $V μ m^{- 1}$ $V μ m^{- 1}$ for the arrays of SiNWs synthesized from Si substrate by Au coating of 8s, 15s and 25s respectively. Moreover, from Fowler–Nordheim plot, the turn-on field is observed to decrease from 16.56 $V ∕ μ m$ $V ∕ μ m$ for as-prepared to 8.77 $V ∕ μ m$ $V ∕ μ m$ for 25s Au sputtered SiNW arrays. The effective work functions of the electron emitting array of SiNWs have been improved from 0.5meV to 0.1meV.

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