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BRIEF REPORTNo Access

The Structural, Morphological, and Resistive Switching Memory Studies of Zinc Tungstate Prepared by Hydrothermal Method

PG and Research and Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029, Tamil Nadu, India

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,

Chandrasekar Sivakumar

Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan

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Department of Electronic Engineering, School of Electronic Science and Technology, Xiamen University, Xiamen 361005, P. R. China

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,

Narendhar Chandrasekar

Department of BioNano Technology, Gachon University, 1342, Seongnam-Daero, Sujeong-Gu, Seongnam 13120, Gyeonggi, Republic of Korea

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,

Department of Environmental Engineering and Management, Chaoyang University of Technology, Taichung 41349, Taiwan

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Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan

E-mail Address: babubalrajr@gmail.com

Corresponding authors.

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Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan

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, and

N. Senthil Kumar

https://orcid.org/0000-0002-4897-0239

PG and Research and Department of Physics, Kongunadu Arts and Science College, Coimbatore 641029, Tamil Nadu, India

E-mail Address: kumarsrkvphy@gmail.com

Corresponding authors.

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https://doi.org/10.1142/S1793292022500849Cited by:0 (Source: Crossref)

Abstract

Nanostructure-based resistive switching memory devices are being developed for low power, multilevel storage capability, extended retention capacity, and scalable devices. The zinc tungstate (ZnWO $_{4})$ $_{4})$ nanoparticle was prepared via the facile hydrothermal method. The X-ray diffraction technique confirmed ZnWO₄ monoclinic phase and crystallite nature. The scanning electron microscope was used to identify the rod-like ZnWO₄ nanostructure, and further, the lattice orientation was investigated by high-resolution transmission electron microscopy. X-ray photoelectron spectroscopy confirmed the binding states with composition of ZnWO₄. Resistive switching memory based on ZnWO₄ was produced and resulted in low-operating voltage.

Keywords:

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Journal cover image

Vol. 17, No. 11

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History

Received 26 February 2022

Accepted 27 September 2022

Published: 9 November 2022

Keywords