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Enhancement of CuO/Si Solar Cell Efficiency by Cu2O Doping Prepared Via Thermal Evaporation Technique

    https://doi.org/10.1142/S1793292024500851Cited by:0 (Source: Crossref)

    CuO:Cu2O/Si heterojunctions have been prepared with different concentrations of Cu2O nanoparticles using the thermal evaporation technique. The X-ray diffraction (XRD) results show that the prepared films are polycrystalline with orthorhombic structure and preferential orientation (110) direction along the c axis at 2𝜃=32.82, which corresponds to the pure CuO with crystallite size 18nm, while the particle size ranged from 14nm to 34 nm (resulted from SEM test). The optical properties were studied by recording the absorbance spectra using the UV–visible spectrophotometer. The absorbance increased with Cu2O doping. The high values of the energy gap refer to the quantization effect. The electrical properties including the Hall effect were studied. CuO:Cu2O/Si heterojunctions have been prepared at different concentrations. IV characteristics show that the Cu2O doping increases the energy conversion efficiency by retarding the electron–hole recombination and the improved device performance is caused by the high short-circuit current (Isc) and open circuit voltage (Voc) and found that the highest efficiency (η) at doping 0.006 Cu2O 3.471% with Voc of 2.20V, Isc of 0.0170mA cm2 and F.F of 0.6497 at P=100mW/cm2.