World Scientific
Skip main navigation

Cookies Notification

We use cookies on this site to enhance your user experience. By continuing to browse the site, you consent to the use of our cookies. Learn More
×

System Upgrade on Tue, May 28th, 2024 at 2am (EDT)

Existing users will be able to log into the site and access content. However, E-commerce and registration of new users may not be available for up to 12 hours.
For online purchase, please visit us again. Contact us at customercare@wspc.com for any enquiries.
Special Issue on Advanced Functional Materials and Devices; Guest Editors: Jinkui Feng and Yu Chen — Research ArticlesNo Access

Approximations to defect chemistry in Bi4Ti3O12

    https://doi.org/10.1142/S1793604716420066Cited by:4 (Source: Crossref)

    Bismuth titanate (Bi4Ti3O12 or BiTO) is known for its high resistance to dielectric fatigue and relatively large remnant polarization. Owing to these characteristics, it has been applied in FeRAM memory. BiTO is also known to be a potential ionic conductor. In both applications, crystalline defects play an important role. In this work, a standard thermochemical equilibrium procedure is used to analyze defect chemistry in BiTO. The results indicate a strong oxidized state. To obtain a reduced condition, extremely low oxygen partial pressures and high temperatures have to be achieved. Even at normal conditions, results show a relatively high concentration of holes, which is in agreement with the p-type leaking experimentally observed, relatively high concentration of oxygen vacancies, which suggest the potential application of BiTO as ion conductor, and relative high concentration of bismuth vacancies, in accordance with the known problem of bismuth volatilization observed during the processing of this material.