Research ArticleNo Access

Reducing parasitic absorption and recombination losses in silicon solar cells through transition metal doped glass frit

Xing Jiang

School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, P. R. China

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Zhou Gao

School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, P. R. China

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Xingbo Wang

School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, P. R. China

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Yongji Chen

School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, P. R. China

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Jian Liu

School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, P. R. China

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Mingjian Zhang

School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, P. R. China

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Yuan Lin

School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, P. R. China

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, and

Feng Pan

http://orcid.org/0000-0002-1362-4336

School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, P. R. China

E-mail Address: panfeng@pkusz.edu.cn

Corresponding author.

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https://doi.org/10.1142/S1793604719500875Cited by:1 (Source: Crossref)

Abstract

Efficient electron selective contacts, smoother rear silicon surface and passivation of silicon-electrode interfaces could reduce parasitic light absorption and electron-hole recombination. Therefore, they are necessary for high conversion efficiency in silicon solar cells. In this work, a novel transition metal doped glass frit is fabricated and introduced into pristine Al paste. As a result, the average power conversion efficiency (PCE) of cells is improved from 17.9 to 18.3%. Combining several results, the improvement can be attributed to three key factors: (a) a thicker back surface field (BSF) layer that blocks electrons; (b) a smoother rear silicon surface which leads to less parasitic absorption; and (c) glass frit coating on aluminum particles which may facilite hole-transfer from silicon layer to aluminum electrode.

Keywords:

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