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High-quality BaTiO₃ epitaxial growth on GaAs (001) substrate by novel SrTiO₃/Ti $_{2.5}$ O₃ buffer layers

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China

E-mail Address: 372858779@qq.com

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Xingpeng Liu

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China

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Jun Zhu

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China

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https://doi.org/10.1142/S1793604722500187Cited by:0 (Source: Crossref)

Abstract

Perovskite ferroelectric BaTiO₃ material showed promising application in the photovoltaic field due to its positive polarization enhanced open voltage with ferroelectric modulation. Achieving perfect interfaces between the multi-layers based on BTO film was still unresolved. Therefore, we developed the bottom buffer layers SrTiO₃/Ti $_{2.5}$ O₃ films deposited on GaAs for reducing the lattice mismatch between the epitaxial oxide (BTO) GaAs via PLD system. The out-of-plane epitaxial relationship of this heterostructure was [110]BaTiO₃//[110]SrTiO₃//[010]Ti $_{2.5}$ O₃//[001]GaAs and the in-plane epitaxial relationship was determined to be [110]BaTiO₃//[110]SrTiO₃//[100]Ti $_{2.5}$ O₃//[110]GaAs from RHEED and XRD results. In addition, we found that the inter-diffusions of Ga and As atoms from GaAs substrate to oxides films were prevented greatly by the SrTiO₃/Ti $_{2.5}$ O₃ passivation layer. Using the Gibbs free energies of formations equations, we explained that the Ga atoms couldn’t diffuse through Ti-oxides at Ti $_{2.5}$ O₃/GaAs interface. Our work provided an effective measurement to develop the BTO application in the photovoltaic field.

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