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Study on properties of tantalum-doped La₂Ti₂O₇ ferroelectric ceramics

Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, P. R. China

College of Information Science and Engineering, Guilin University of Technology, Guilin 541004, P. R. China

School of Engineering and Material Science, Queen Mary University of London, London E1 4NS, UK

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Jibran Khaliq

School of Engineering and Material Science, Queen Mary University of London, London E1 4NS, UK

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Huanpo Ning

School of Engineering and Material Science, Queen Mary University of London, London E1 4NS, UK

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Xiaoyong Wei

Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, P. R. China

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Haixue Yan

School of Engineering and Material Science, Queen Mary University of London, London E1 4NS, UK

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, and

Michael J. Reece

School of Engineering and Material Science, Queen Mary University of London, London E1 4NS, UK

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https://doi.org/10.1142/S2010135X15500058Cited by:11 (Source: Crossref)

Abstract

A series of ceramics with a general formula, La₂Ti_2-xTa_xO₇, in which x = 0.05, 0.1, 0.2, and 0.3, were prepared by Spark Plasma Sintering (SPS). Effects of tantalum substitution for titanium on the structure, dielectric, and piezoelectric properties were studied. Results revealed that the structure changed gradually from 4-layer to 3-layer due to the higher valence of Ta. The solid solution limit of tantalum in La₂Ti₂O₇ lattice was in the proximity of x = 0.2. The ferroelectric Curie temperature (T_c) decreased with increasing tantalum doping content. dc resistivity reached a maximum value at x = 0.2 with a value of ∼ 1.0 × 10⁸Ω ⋅ cm at 600°C. The influence of texture on the piezoelectric properties of La₂Ti_2-xTa_xO₇ ceramics was also investigated. A maximum d₃₃ value ∼2.1 pC/N was obtained at x = 0.2.

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