Loading [MathJax]/jax/output/CommonHTML/jax.js
World Scientific
Skip main navigation

Cookies Notification

We use cookies on this site to enhance your user experience. By continuing to browse the site, you consent to the use of our cookies. Learn More
×

System Upgrade on Tue, May 28th, 2024 at 2am (EDT)

Existing users will be able to log into the site and access content. However, E-commerce and registration of new users may not be available for up to 12 hours.
For online purchase, please visit us again. Contact us at customercare@wspc.com for any enquiries.

Effect of grain size on ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films prepared by rf-magnetron sputtering

    https://doi.org/10.1142/S2010135X23500170Cited by:2 (Source: Crossref)

    Bi3.25La0.75Ti3O12(BLT) thin films are promising materials used in non-volatile memories. In this work, BLT films were deposited on Pt(111)/Ti/SiO2/Si substrates by rf-magnetron sputtering method followed by annealing treatments. The microstructures of BLT thin films were investigated via X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). With the increase in annealing temperature, the grain size increased significantly and the preferred crystalline orientation changed. A well-saturated hysteresis loop with a superior remnant polarization of 15.4 μC/cm2 was obtained for BLT thin films annealed at 700C. The results show that the dielectric constant decreased with the increase in grain sizes.