HOMOGENEOUS SEMICONDUCTOR AT EQUILIBRIUM

The following sections are included:

• INTRODUCTION

  • Homogeneous

  • Equilibrium

• PURE SEMICONDUCTOR CRYSTAL

• IMPURE SEMICONDUCTOR

  • Donors, Acceptors, and Isoelectronic Traps

  • Charge States of Donors and Acceptors

  • Binding Energy of Trapped Electrons and Holes

• ELECTRON AND HOLE CONCENTRATIONS AT THERMAL EQUILIBRIUM

  • The Fermi-Dirac Distribution Function

  • Electron and Hole Concentrations (Elementary Analysis)

  • Electron and Hole Concentrations (Advanced Analysis)

• CALCULATIONS OF THE FERMI ENERGY LEVEL AND THE CONCENTRATION OF ELECTRONS AND HOLES

  • E_F, N and P in Pure Semiconductors

  • E_F, N and P in Impure or Extrinsic Semiconductors

  • Temperature Dependences of N, P and E_F

  • Intrinsic Temperature

  • Temperature Dependence of the Electron Distribution

• DEVICE ESSENTIAL ADVANCED TOPICS

  • High Carrier Concentration Effects

  • Impurity Deionization Effects

  • Impurity Bands

  • Carrier Screening of Impurity

• BIBLIOGRAPHY

• PROBLEMS