DRIFT, DIFFUSION, GENERATION, RECOMBINATION, TRAPPING AND TUNNELING

The following sections are included:

• INTRODUCTION

  • Drift

  • Drift Velocity in an Electric Field

  • Drift Current, Drift Mobility and Conductivity

  • Temperature Dependences of the Drift Mobility

  • Electric Field Dependence of Mobility

  • Intrinsic and Extrinsic Conductivities of a Semiconductor

• DIFFUSION

  • The Einstein Relationship

  • The Boltzmann Relationship

  • Examples of Diffusion Current

• CONSTANCY OF THE FERMI ENERGY LEVEL

• THE QUASI-FERMI LEVELS AND QUASI-FERMI POTENTIALS

• CONTINUITY EQUATION OF CHARGE AND CURRENT

• THE SHOCKLEY EQUATIONS FOR SEMICONDUCTORS

• GENERATION, RECOMBINATION, TRAPPING AND TUNNELING

  • Interband Thermal Generation and Recombination

  • Interband Optical Generation and Recombination

  • Interband Auger Recombination and Impact Generation

  • Band-Trap Thermal (SRH) Generation-Recombination-Trapping

  • Band-Trap Optical Generation-Recombination-Trapping

  • Band-Trap Auger Capture and Impact Emission

  • Three Intertrap Transitions

  • Elastic Tunneling

  • Inelastic Tunneling

  • Collective Transitions

  • Lifetimes

  • Interband Thermal and Optical Recombination Lifetimes

  • Band-Trap Thermal (SRH) and Optical Recombination Lifetimes

  • Lifetimes for Simultaneous Presence of Many GRTT Mechanisms

• PHYSICS AND DATA OF THE GRTT RATE COEFFICIENTS

  • Thermal (SRH) Capture and Emission Rates

  • Optical Emission Rate

  • Interband Optical Generation Rate

  • Interband Impact Generation Rate

  • Interband Tunneling Rate

  • Band-Trap Tunneling Rate

• BIBLIOGRAPHY

• PROBLEMS