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BIPOLAR JUNCTION TRANSISTOR AND OTHER BIPOLAR TRANSISTOR DEVICES

      https://doi.org/10.1142/9789810248116_0007Cited by:0 (Source: Crossref)
      Abstract:

      The following sections are included:

      • INTRODUCTION

      • BACKGROUND AND HISTORY

      • FABRICATION OF A DOUBLE DIFFUSED SILICON BJT

      • D.C. CHARACTERISTICS OF IDEAL AND REAL BJT’S

        • Two-Diode D.C. Circuit Representation of BJT

        • Data of BJT Characteristics

        • Derivation of the D.C. Characteristics of p/n/p BJT

        • The Original and Extended Ebers-Moll Equations of BJT

        • Two-Port Nonlinear D.C. Network Representations of BJT

        • Lumped D.C. Models of Realistic Multi-Dimensional BJT

        • Material and Structural Dependences of D.C. Two-Port Parameters of BJT

        • Bias Dependences of the D.C. Parameters of BJT

        • Collector Multiplication and Negative Resistance

      • SMALL-SIGNAL CHARACTERISTICS OF BJT

        • Common-Base Small-Signal Tee (CBss-Tee) Models of BJT

        • Maximum Frequency of Oscillation of BJT

        • Common-Emitter Small-Signal Hybrid-Pi (CESS-HJπ) Model of BJT

        • Common-Emitter Current Gain, Cutoff Frequency and Bandwidth

      • LARGE-SIGNAL SWITCHING CHARACTERISTICS OF BJT

        • The Diffusion and Charge-Control Equations

        • Common-Base Large-Signal BJT Switching Transients

        • Common-Emitter Large-Signal BJT Switching Transients

        • Comparison of CB and CE BJT Switching Transients

        • Speeding Up the BJT via Technology

        • Propagation Delay in Ring Oscillator

      • CIRCUIT APPLICATIONS OF BIPOLAR JUNCTION TRANSISTOR

        • The BJT Digital Inverters

        • The Common-Emitter BJT Inverter

        • Speeding Up the CE BJT Inverter

        • The Emitter-Coupled 2-BJT Inverter (ECL)

        • The CB-CE Transistor-Transistor Coupled 2-BJT Inverter (TTL)

        • The BIPOLAR-MOS Inverters (BiMOS, BiCMOS, CBiCMOS)

      • THE HETEROSTRUCTURE BIPOLAR JUNCTION TRANSISTORS (HBJTs or HBTs)

        • Historical Background

        • Fabrication Methods of GexSi1-xHBJT

        • Operation Principle of HBJTs

        • Energy Bands and Phonon Spectra of Commensurate Layers

      • THE FOUR-LAYER PNPN DEVICES

        • Four-Layer PNPN Diode Characteristics

        • PNPN Triode (SCR) Characteristics

        • MOS-SCR

        • Latch-up in CMOS

      • BIBLIOGRAPHY

      • PROBLEMS