BIPOLAR JUNCTION TRANSISTOR AND OTHER BIPOLAR TRANSISTOR DEVICES
The following sections are included:
INTRODUCTION
BACKGROUND AND HISTORY
FABRICATION OF A DOUBLE DIFFUSED SILICON BJT
D.C. CHARACTERISTICS OF IDEAL AND REAL BJT’S
Two-Diode D.C. Circuit Representation of BJT
Data of BJT Characteristics
Derivation of the D.C. Characteristics of p/n/p BJT
The Original and Extended Ebers-Moll Equations of BJT
Two-Port Nonlinear D.C. Network Representations of BJT
Lumped D.C. Models of Realistic Multi-Dimensional BJT
Material and Structural Dependences of D.C. Two-Port Parameters of BJT
Bias Dependences of the D.C. Parameters of BJT
Collector Multiplication and Negative Resistance
SMALL-SIGNAL CHARACTERISTICS OF BJT
Common-Base Small-Signal Tee (CBss-Tee) Models of BJT
Maximum Frequency of Oscillation of BJT
Common-Emitter Small-Signal Hybrid-Pi (CESS-HJπ) Model of BJT
Common-Emitter Current Gain, Cutoff Frequency and Bandwidth
LARGE-SIGNAL SWITCHING CHARACTERISTICS OF BJT
The Diffusion and Charge-Control Equations
Common-Base Large-Signal BJT Switching Transients
Common-Emitter Large-Signal BJT Switching Transients
Comparison of CB and CE BJT Switching Transients
Speeding Up the BJT via Technology
Propagation Delay in Ring Oscillator
CIRCUIT APPLICATIONS OF BIPOLAR JUNCTION TRANSISTOR
The BJT Digital Inverters
The Common-Emitter BJT Inverter
Speeding Up the CE BJT Inverter
The Emitter-Coupled 2-BJT Inverter (ECL)
The CB-CE Transistor-Transistor Coupled 2-BJT Inverter (TTL)
The BIPOLAR-MOS Inverters (BiMOS, BiCMOS, CBiCMOS)
THE HETEROSTRUCTURE BIPOLAR JUNCTION TRANSISTORS (HBJTs or HBTs)
Historical Background
Fabrication Methods of GexSi1-xHBJT
Operation Principle of HBJTs
Energy Bands and Phonon Spectra of Commensurate Layers
THE FOUR-LAYER PNPN DEVICES
Four-Layer PNPN Diode Characteristics
PNPN Triode (SCR) Characteristics
MOS-SCR
Latch-up in CMOS
BIBLIOGRAPHY
PROBLEMS