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PHOTOCAPACITANCE OF SELECTIVELY DOPED AlGaAs/GaAs HETEROSTRUCTURES CONTAINING DEEP TRAPS
https://doi.org/10.1142/9789812770332_0028Cited by:0 (Source: Crossref)
Abstract:
The results of calculations of the low-frequency and the high-frequency barrier capacitance of selectively doped AlGaAs/GaAs heterostructures containing deep traps in the AlGaAs layer are presented. The calculations are done for the samples in the dark and under extrinsic illumination. It is shown that the high-frequency photocapacitance of these structures exhibits a positive peak, and the low-frequency photocapacitance has a positive peak followed by a negative valley. The underlying physical mechanisms are discussed.
