ERRATA: "THz DETECTION BY RESONANT 2-D PLASMONS IN FIELD EFFECT DEVICES"
SPECIAL ISSUE: FRONTIERS IN ELECTRONICS: FUTURE CHIPS, (edited by Y. S. PARK, M. S. SHUR and W. TANG) [International Journal of High Speed Electronics and Systems,Vol. 12, No. 2 (2002), 491-500], The following paper is the updated version of the one published in the above issue.
We demonstrate resonant detection of terahertz radiation by two-dimensional plasma waves in two field effect devices: a commercial field effect transistor (FET) and a double quantum well field effect transistor with a periodic grating gate. In both devices, the standing 2-D plasmon is tuned to the frequency of the THz radiation by varying the gate bias. The double quantum well field effect transistors exhibits a rich photoconductive response corresponding to spatial harmonics of the standing 2-D plasmons under the metal part of the periodic gate.
