Heterojunction Bipolar Transistors: Processing and Devices

The following sections are included:

• Introduction

• Layer Structure

• Device Isolation

  • Ion Implantation

  • Redistribution of Implanted Ions

  • Stability

  • MeV O⁺ Ion Implantation

• Ohmic Contacts

• N-Contacts

  • Au-Ge Based Metallization

  • Native Oxide Removal

  • W on InGaAs

  • Non-alloyed Ohmic Contacts on InN/GaAs

  • Non-Alloyed Contacts on InN/InP

• P Contact

  • AuBe Metallization

  • TiAu-Based Metallization

  • W-Based Metallization

  • Pt/Ti/Pt/Au Metallization

• Etching

• Plasma Etching

  • GaAs

  • InGaP and InAlP

  • Via Hole Etching

• Wet Chemical Etching

  • Selective AlGaAs Etchants

  • Selective InGaP and InAlP Etchants

• Passivation

• Reliability

• Device Results

• References