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https://doi.org/10.1142/9789814277112_0004Cited by:0 (Source: Crossref)
Abstract:

The following sections are included:

  • Critical Semiconductor Properties for Light Emission

    • Recombination and band structure

    • Recombination processes

    • Quantum efficiency

  • Material Considerations

    • Solid solutions

      • Ternary systems using AlGaAs (GaAs)

      • Quaternary systems using InGaAsP (InP)

      • Other materials

    • Strained lattices

    • Amphoterically doped LEDs

    • Heterojunction light-emitting diodes

  • Laser Diodes

    • Basic laser properties

    • In-plane semiconductor lasers

    • Vertical cavity semiconductor lasers (VCSELs)

    • Spectral width

      • Light-emitting diodes

      • In-plane lasers with Fabry–Perot reflectors

      • Laser with distributed feedback reflectors

    • Tunable lasers

  • Detectors

    • Light absorption

    • Basic p-n junction photodetector

    • Avalanche photodiodes

  • Summary

  • References