OBSERVATION ON PHOTOLUMINESCENCE EVOLUTION IN 300 keV SELF-ION IMPLANTED AND ANNEALED SILICON

We report photoluminescence in the self-ion implanted silicon wafers annealed from room temperature to 950°C. The annealing temperature has been demonstrated to be a key factor which induces the dominant photoluminescence structures changed from broadband, W line, S bands, R line, to D bands with its increase. The optimal annealed temperature ranges for these features are obtained. At the low annealing temperatures (≤ 650°C), the PL spectra were predominated by several sharp peaks which originate from point defects at low record temperatures and by broadband which originate from cluster defects at high record temperature. At higher annealing temperature (> 650°C), the PL spectra were only dominated by D₁ band which undergoes red-shift and widening with increasing record temperature.