EFFECTS OF Ge MOLE FRACTION ON ELECTRICAL CHARACTERISTICS OF STRAINED SiGe CHANNEL p-MOSFET

Superior hole-mobility and compatibility with mainstream Si processing technology make strained SiGe an attractive channel material for p-MOSFET. In this paper, the electrical characteristics of strained Si_1-xGe_x channel p-MOSFET with various Ge mol fraction are studied via 2-D numerical simulation by ISE TCAD simulation software. The results indicate that the Ge mol fraction affects electrical characteristics of the device significantly. With the increase of Ge mol fraction, remarkable increase occurs in the sub-threshold current, while the sub-threshold swing is stable. At the same condition, increment of the gate capacitance in strained Si_1-xGe_x p-MOSFET is slower gradually. Also, the threshold voltage shows a linear function of the Ge mol fraction.