Semiconductor Surfaces and Interfaces Studied with Synchrotron Radiation

Semiconductor surfaces and interfaces have been an active area of research for decades. The application of synchrotron radiation based spectroscopies have contributed significantly to the current understanding in this field. The principal focus of this paper is studies that have yielded insight into the nature of the atomic and electronic structure of semiconductor surfaces and interfaces. In addition, aspects of synchrotron radiation, measurement techniques and the MBE growth process are presented. Silicon is used as a prototypical covalent semiconductor, GaAs to illustrate some of the factors that become important when more chemical variation is introduced, and CaF₂ as a prototypical ionic insulator.