LOW-FREQUENCY ELECTRONIC NOISE IN GRAPHENE TRANSISTORS: COMPARISON WITH CARBON NANOTUBES

We report results of the experimental investigation of the low-frequency noise in graphene transistors. The graphene devices were measured in three-terminal configuration. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and the Hooge parameter α_H ~10⁻³. Both top-gate and back-gate devices were studied. The analysis of the noise spectral-density dependence on the gate biases helped us to elucidate the noise sources in these devices. We compared the noise performance of graphene devices with that of carbon nanotube devices. It was determined that graphene devices works better than carbon nanotube devices in terms of the low-frequency noise. The obtained results are important for graphene electronic, communication and sensor applications.