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RADIATION EFFECTS IN CHARGE-COUPLED DEVICE (CCD) IMAGERS AND CMOS ACTIVE PIXEL SENSORS

G. R. HOPKINSON

Sira Electro-Optics Ltd, South Hill, Chislehurst, Kent, BR7 5EH, UK

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and

A. MOHAMMADZADEH

Sira Electro-Optics Ltd, South Hill, Chislehurst, Kent, BR7 5EH, UK

ESA, ESTEC, Keplerlaan 1, 2200 AG Noordwijk, The Netherlands

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https://doi.org/10.1142/S0129156404002442Cited by:24 (Source: Crossref)

Abstract

This review concerns radiation effects in silicon Charge-Coupled Devices (CCDs) and CMOS active pixel sensors (APSs), both of which are used as imagers in the visible region. Permanent effects, due to total ionizing dose and displacement damage, are discussed in detail, with a particular emphasis on the space environment. In addition, transient effects are briefly summarized. Implications for ground testing, effects mitigation and device hardening are also considered. The review is illustrated with results from recent ground testing.

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