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CARBON NANOTUBE FIELD-EFFECT TRANSISTORS

JING GUO

Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, USA

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SIYURANGA O. KOSWATTA

Electrical and Computer Engineering, Purdue University, 465 Northwestern Avenue, West Lafayette, IN 47907, USA

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NEOPHYTOS NEOPHYTOU

Electrical and Computer Engineering, Purdue University, 465 Northwestern Avenue, West Lafayette, IN 47907, USA

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, and

MARK LUNDSTROM

Electrical and Computer Engineering, Purdue University, 465 Northwestern Avenue, West Lafayette, IN 47907, USA

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https://doi.org/10.1142/S0129156406004077Cited by:29 (Source: Crossref)

Abstract

This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experiments can be explained and device designs optimized. The paper concludes with some thoughts on challenges and opportunities for CNTFET electronics.

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Vol. 16, No. 04

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CARBON NANOTUBE FIELD-EFFECT TRANSISTORS

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