Chapter 4. Optoelectronics and Advanced Lasers, Detectors and ImagersNo Access

IMPREGNATED SEMICONDUCTOR SCINTILLATOR

SERGE LURYI

Electrical and Computer Engineering Department, University at Stony Brook, Stony Brook, NY 11794-2350, USA

https://doi.org/10.1142/S0129156408005928Cited by:7 (Source: Crossref)

Abstract

A semiconductor scintillation-type gamma radiation detector is discussed in which the gamma-ray absorbing semiconductor body is impregnated with multiple small direct-gap semiconductor inclusions of bandgap slightly narrower than that of the body. If the typical distance between them is smaller than the diffusion length of carriers in the body material, the photo-generated electrons and holes will recombine inside the impregnations and produce scintillating radiation to which the wide-gap body is essentially transparent. In this way it is possible to implement a semiconductor scintillator of linear dimensions exceeding 10 cm.

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Vol. 18, No. 04

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IMPREGNATED SEMICONDUCTOR SCINTILLATOR

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