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SMALL SIGNAL AND DC CHARACTERISTICS OF ULTRA-THIN GaN/AlN/GaN HFETs

KELSON D. CHABAK

Sensors Directorate, US Air Force Research Laboratory, 2241 Avionics Circle, Wright-Patterson AFB, OH 45433, USA

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DENNIS E. WALKER, JR.

Sensors Directorate, US Air Force Research Laboratory, 2241 Avionics Circle, Wright-Patterson AFB, OH 45433, USA

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ANTONIO CRESPO

Sensors Directorate, US Air Force Research Laboratory, 2241 Avionics Circle, Wright-Patterson AFB, OH 45433, USA

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MANUEL TREJO

Sensors Directorate, US Air Force Research Laboratory, 2241 Avionics Circle, Wright-Patterson AFB, OH 45433, USA

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MAURICIO KOSSLER

Sensors Directorate, US Air Force Research Laboratory, 2241 Avionics Circle, Wright-Patterson AFB, OH 45433, USA

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STEVE TETLAK

Sensors Directorate, US Air Force Research Laboratory, 2241 Avionics Circle, Wright-Patterson AFB, OH 45433, USA

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JAMES K. GILLESPIE

Sensors Directorate, US Air Force Research Laboratory, 2241 Avionics Circle, Wright-Patterson AFB, OH 45433, USA

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ROBERT C. FITCH

Sensors Directorate, US Air Force Research Laboratory, 2241 Avionics Circle, Wright-Patterson AFB, OH 45433, USA

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GLEN D. VIA

Sensors Directorate, US Air Force Research Laboratory, 2241 Avionics Circle, Wright-Patterson AFB, OH 45433, USA

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AMIR DABIRAN

SVT Associates, Inc., 7620 Executive Drive, Eden Prairie, MN 55344, USA

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A.M. WOWCHAK

SVT Associates, Inc., 7620 Executive Drive, Eden Prairie, MN 55344, USA

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, and

P.P. CHOW

SVT Associates, Inc., 7620 Executive Drive, Eden Prairie, MN 55344, USA

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https://doi.org/10.1142/S0129156411006660Cited by:1 (Source: Crossref)

Abstract

This paper presents high performance device results using an ultra-thin AlN/GaN structure on sapphire substrate with a 100-nm T-gate. Excellent dc and RF characteristics are reported, including an extrinsic transconductance of 500 mS/mm and an extrinsic f_t/f_max(U) ratio of 78/111-GHz which is among the highest reported for AlN/GaN HFETs. Low gate leakage results are also presented despite the small barrier thickness and absence of a gate dielectric. Modeling of the small signal parameters is also discussed to gain an understanding of the limiting and contributing performance factors.

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