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Special Issue — Advance Characterization of Electronic Materials Proceeding of the Symposium H of the 8th IUMRS International Conference on the Electronic Materials (IUMRS-ICEM2002)No Access

IMPLEMENTATION OF NEURAL NETWORK METHOD TO INVESTIGATE DEFECT CENTERS IN SEMI-INSULATING MATERIALS

    https://doi.org/10.1142/S0217979202015595Cited by:3 (Source: Crossref)

    A neural network (NN) method has been proposed as a new algorithm for extraction of defect centers parameters in semi-insulating materials from experimental data obtained by photoinduced transient spectroscopy (PITS). The new algorithm is applied to investigate irradiation-induced defect centers in high resistive silicon. The folds on the PITS spectral surface formed due to the presence of defect levels are best fitted with a two-dimensional approximation function with implementation of the NN learning process. As a result, the Arrhenius plots for defect centers are obtained and the parameters of these centers are determined.

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