Application and DevicesNo Access
MODULATION OF SUPERCONDUCTIVITY BY Si+ IMPLANTATION IN Bi2212 SINGLE CRYSTALS
https://doi.org/10.1142/S0217979205028670Cited by:0 (Source: Crossref)
Abstract
The multiple quasiparticle tunnelling branches with large hysteresis were measured on the mesas of Si+ implanted Bi2Sr2CaCu2O8+x single crystals. For given Si+ dosage the tunnelling critical current Ic, decreased for junctions located closer to the mesa surface; meanwhile the voltage interval between the neighboring quasiparticle branches decreased with increasing the Si+ dosage.
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