PHENOMENOLOGICAL MAGNETORESISTANCE THEORY OF FE3F4 FILMS DOPED BY TRANSITION METAL
Abstract
Microstructures of the Fe3F4 granular films doped by transition metal (TM) were analyzed and the phenomenological magnetoresistance theory was proposed in this paper. Influences of technological parameters including the temperature (T), the applied field (H) and the content (x) on the magnetoresistance (MR) are analyzed in detail. Through theoretical analysis, there are the following conclusions. Firstly, variations of MR with x are non-linear and MR may arrive at the maximum at a certain x. Secondly, MR decreases strongly with the increase of T, but the decreases may be reduced by doped TM. Then doped TM can help to improve electric and magnetic properties of half metals. Thirdly, MR increases with the increase of H when the magnetization of grains is unsaturated.
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