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EFFECT OF PSEUDOMORPHIC MULTIPLE QUANTUM WELL LAYERS ON CHARACTERISTICS OF UNCOOLED ELECTROLUMINESCENT DIODE

Department of Electrical and Computer Engineering, Johns Hopkins University, 105 Barton Hall, 3400 N. Charles St., Baltimore, MD 21218, USA

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ZAIL LHEE

AMOLED Group, Samsung SDI, 428-5, Gongsedong, Yongin, 446-577, S. Korea

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, and

SUNG-WOONG PARK

Network Examination Team, Korean Intellectual Property Office, 920 Dunsandong, Seogu, Daejeon, 302-701, S. Korea

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https://doi.org/10.1142/S0217979209054764Cited by:0 (Source: Crossref)

Abstract

We have fabricated and characterized the uncooled light emitting device having a pseudomorphic structure of multiple quantum wells. The effect of numbers of compressively strained quantum well layers on the semiconductor diode laser characteristics was experimentally demonstrated, depending on room and high temperatures. In addition to the automatically embedded absorptive grating which can reduce the epitaxial growth step, the laser performance can be optimized for both threshold current and differential slope efficiency when the quantum well numbers are reduced to five layers for optical communication systems.

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Vol. 23, No. 32

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Received 2 February 2009

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EFFECT OF PSEUDOMORPHIC MULTIPLE QUANTUM WELL LAYERS ON CHARACTERISTICS OF UNCOOLED ELECTROLUMINESCENT DIODE

Abstract

References

PROGRESS IN DEVELOPMENT OF ROOM TEMPERATURE CW GASB BASED DIODE LASERS FOR 2-3.5 μM SPECTRAL REGION

PROGRESS IN DEVELOPMENT OF ROOM TEMPERATURE CW GASB BASED DIODE LASERS FOR 2-3.5 μM SPECTRAL REGION

COMPARISON OF MONOLITHIC PASSIVELY MODE-LOCKED LASERS USING In(Ga)As QUANTUM DOT OR QUANTUM WELL MATERIALS GROWN ON GaAs SUBSTRATES

ENERGY TRANSFER AND LASINQ IN InGaN/GaN MULTIPLE QUANTUM WELL HETEROSTRUCTURES

ELECTROABSORPTION OF UNSTRAINED InGaAs/InAlGaAs MULTIPLE QUANTUM WELL STRUCTURE GROWN ON GaAs SUBSTRATES

QUANTUM WELL LASERS AND THEIR APPLICATIONS

STRUCTURAL AND OPTICAL PROPERTIES OF InGaN/GaN MULTIPLE QUANTUM WELL LIGHT EMITTING DIODES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION

PERFORMANCE OF PSEUDOMORPHIC ULTRAVIOLET LEDs GROWN ON BULK ALUMINUM NITRIDE SUBSTRATES

System Upgrade on Tue, May 28th, 2024 at 2am (EDT)

EFFECT OF PSEUDOMORPHIC MULTIPLE QUANTUM WELL LAYERS ON CHARACTERISTICS OF UNCOOLED ELECTROLUMINESCENT DIODE

Abstract

Recommended

PROGRESS IN DEVELOPMENT OF ROOM TEMPERATURE CW GASB BASED DIODE LASERS FOR 2-3.5 μM SPECTRAL REGION

PROGRESS IN DEVELOPMENT OF ROOM TEMPERATURE CW GASB BASED DIODE LASERS FOR 2-3.5 μM SPECTRAL REGION

COMPARISON OF MONOLITHIC PASSIVELY MODE-LOCKED LASERS USING In(Ga)As QUANTUM DOT OR QUANTUM WELL MATERIALS GROWN ON GaAs SUBSTRATES

ENERGY TRANSFER AND LASINQ IN InGaN/GaN MULTIPLE QUANTUM WELL HETEROSTRUCTURES

ELECTROABSORPTION OF UNSTRAINED InGaAs/InAlGaAs MULTIPLE QUANTUM WELL STRUCTURE GROWN ON GaAs SUBSTRATES

QUANTUM WELL LASERS AND THEIR APPLICATIONS

STRUCTURAL AND OPTICAL PROPERTIES OF InGaN/GaN MULTIPLE QUANTUM WELL LIGHT EMITTING DIODES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION

PERFORMANCE OF PSEUDOMORPHIC ULTRAVIOLET LEDs GROWN ON BULK ALUMINUM NITRIDE SUBSTRATES