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MODIFICATION OF OPTICAL TRANSITION PROBABILITY IN SEMICONDUCTOR SUPERLATTICES: EFFECTS OF STRUCTURAL DEFECT AND LAYER THICKNESS

School of Physics and Microelectronic and Key Lab for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha 410082, China

School of Science, Jiujiang University, Jiujiang, 332005, China

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LING-LING WANG

School of Physics and Microelectronic and Key Lab for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha 410082, China

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JIANG-NAN FANG

School of Foreign Language, Jiujiang University, Jiujiang, 332005, China

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, and

WEI-QING HUANG

School of Physics and Microelectronic and Key Lab for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha 410082, China

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https://doi.org/10.1142/S0217979211059267Cited by:3 (Source: Crossref)

Abstract

We present the modification of optical transition probability in the superlattices (SLs) due to the presence of structural defect and the variation of layer thickness. The results show that optical transition probability between two bound states is mainly determined by the thicknesses of layer in defect region and its nearest constituent layers for a symmetric structure. When the well layer thickness varies, the variation of transition probabilities between two bound states depend on the parity of the index of minigap n, while those from the bound states to the delocalized scattering is irrelevant to n. It is believed that applying appropriate structure and layer thickness may enhance the optical transition probability in designing optical device.

Keywords:

PACS: 78.76.-n, 78.67.Pt

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