Excess conductivity and the pseudogap state in Hf-doped YBa2Cu3O7−δ ceramics
Abstract
The electrical conductivity of hafnium (Hf)-doped YBa2Cu3O7−δ ceramics is investigated. Hf doping has been revealed to lead to an increase of the number of effective scattering centers for the normal charge carriers. In a broad temperature range, the excess conductivity of the investigated samples obeys an exponential temperature dependence, while near Tc it is satisfactorily described by the Aslamazov–Larkin model. Meanwhile, Hf doping has been shown to lead to a notable broadening of the temperature range for the manifestation of the pseudogap anomaly in the ab-plane.