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Relaxation of the electric resistance in YBa $_{2}$ Cu $_{3}$ O $_{7 - x}$ single crystals at room temperature

Y. I. Boiko

V. N. Karazin Kharkiv National University, 4 Svobody Square, 61077 Kharkiv, Ukraine

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V. V. Bogdanov

V. N. Karazin Kharkiv National University, 4 Svobody Square, 61077 Kharkiv, Ukraine

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R. V. Vovk

V. N. Karazin Kharkiv National University, 4 Svobody Square, 61077 Kharkiv, Ukraine

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S. N. Kamchatnaya

V. N. Karazin Kharkiv National University, 4 Svobody Square, 61077 Kharkiv, Ukraine

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I. L. Goulatis

V. N. Karazin Kharkiv National University, 4 Svobody Square, 61077 Kharkiv, Ukraine

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, and

A. Chroneos

Department of Materials, Imperial College London, London SW7 2AZ, UK

Faculty of Engineering, Environment and Computing, Coventry University, Priory Street, Coventry CV1 5FB, UK

E-mail Address: alexander.chroneos@imperial.ac.uk

Corresponding author.

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https://doi.org/10.1142/S0217984917501792Cited by:0 (Source: Crossref)

Abstract

In this paper, the relaxation of the electrical resistance of a YBa $_{2}$ Cu $_{3}$ O $_{7 - x}$ single crystal that is kept for a long time at room temperature in air atmosphere is investigated. It is shown that with increasing time of keeping, relaxation of the electrical resistivity at room temperature is observed, controlled by a single channel and the classical oxygen ion diffusion mechanisms. The faster transport of oxygen ions in the initial stage of the implantation process can take place along one-dimensional nonstoichiometric vacancies in a single-file diffusion mode. The final stage of oxygen transport in this compound is described by an ordinary classical diffusion mechanism.

Keywords:

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